stP4NB80 stP4NB80fp n - channel 800v - 3 w - 4a - to-220/to-220fp powermesh ? mosfet n typical r ds(on) = 3 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay ? process, stmicroelectronics has designed an advanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprietary edge termination structure, gives the lowest rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive ? internal schematic diagram september 2001 to-220 to-220fp 1 2 3 1 2 3 absolute maximum ratings symbol parameter value unit stP4NB80 stP4NB80fp v ds drain-source voltage (v gs = 0) 800 v v dgr drain- gate voltage (r gs = 20 k w ) 800 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c 4 4(*) a i d drain current (continuous) at t c = 100 o c 2.4 2.4(*) a i dm ( ) drain current (pulsed) 16 16 a p tot total dissipation at t c = 25 o c 100 35 w derating factor 0.8 0.28 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 4.5 4.5 v/ns v iso insulation withstand voltage (dc) ? 2500 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 4 a, di/dt 200 a/ m s, v dd v (br)dss , tj t jmax (*) limited only by maximum t emperature allowed type v dss r ds(on) i d stP4NB80 stP4NB80fp 800 v 800 v 3.3 w 3.3 w 4 a 4 a 1/9
thermal data to-220 to220-fp r thj-case thermal resistance junction-case max 1.25 3.6 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 62.5 0.5 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 4a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 230 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 50 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 2 a 3 3.3 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 4a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 2 a 1.5 2.9 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 700 95 9 920 126 12 pf pf pf stP4NB80/fp 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 400 v i d = 2 a r g = 4.7 w v gs = 10 v 14 8 20 12 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 640 v i d = 4 a v gs = 10 v 21 7 9 29 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 640v i d = 4 a r g = 4.7 w v gs = 10 v 12 9 16 17 13 22 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 4 16 a a v sd ( * ) forward on voltage i sd =4 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c 600 3.3 11 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area for to-220 safe operating area for to-220fp stP4NB80/fp 3/9
thermal impedance for to-220 output characteristics transconductance thermal impedance forto-220fp transfer characteristics static drain-source on resistance stP4NB80/fp 4/9
gate charge vs gate-source voltage normalized gate threshold voltage vs temperature source-drain diode forward characteristics capacitance variations normalized on resistance vs temperature stP4NB80/fp 5/9
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times stP4NB80/fp 6/9
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.40 0.645 l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 m 2.60 0.102 dia. 3.75 3.85 0.147 0.151 p011ci to-220 mechanical data stP4NB80/fp 7/9
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data stP4NB80/fp 8/9
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com stP4NB80/fp 9/9
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